SiC materials and devices

The outer archives are busy

by Robert K. Willardson, Eicke R. Weber, Yoon S. Park

About this book

Wide energy bandgaps, high thermal conductivity, high saturated electron drift velocities, and high-breakdown electric fields make silicon carbide (SiC) a candidate of choice for high-temperature, high-speed, high-frequency, and high-power applications.

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