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The InAs-GaAs heteroepitaxial system has a lattice mismatch of = 7% and under very specific conditions the growth mode follows a version of the Stranski-Krastanov (SK) mechanism, which results in the formation of coherent (dislocation-free) three-dimensional (3D) islands, after the growth of between one and two monolayers (MLs) in a two dimensional (2D) layer-by-layer pseudomorphic mode.
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