Development and Evaluation of a Gaas Based 300 GHz ModuleOliver Ambacher, Alexander Dyck, Freiburg Fraunhofer IAF · First published 2021Open the Tome
Integrated Sub-Millimeter-Wave High-Power Amplifiers in Advanced InGaAs-Channel HEMT TechnologyOliver Ambacher, Laurenz John, Freiburg Fraunhofer IAF · First published 2021Open the Tome
Monolithic Millimeter-Wave Integrated Circuits for Low-Power Wireless Communication Systems with High Data RatesOliver Ambacher, Fabian Thome, Freiburg Fraunhofer IAF · First published 2020Open the Tome
III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter InteractionsShangjr Gwo, Ager, Joel W., III, Fan Ren, Oliver Ambacher, Leo Schowalter · First published 2014Open the Tome
Towards the Solid Protein SurfaceRene Hoffmann, Fraunhofer IAF, Oliver Ambacher · First published 2013Open the Tome
AlGaN/GaN-Based Millimeter-Wave High Electron Mobility TransistorsChristian Haupt, Fraunhofer IAF, Oliver Ambacher · First published 2011Open the Tome
Laser Systems, Part 3Bernd Eppich, Horst Weber, Bernd Sumpf, Peter Loosen, Oliver Ambacher · First published 2011Open the Tome
